1. H. Tanaka; Y. Ohno; and Y. Tadokoro, "Adaptive Control of Angular Sensitivity for VHF-Band Nano-Antenna Using CNT Mechanical Resonator", IEEE Transactions on Molecular, Biological and Mul 3, 24-32 (2016). doi:10.1109/TMBMC.2016.2640282
  2. T. Nobunaga, Y. Tadokoro, Y. Ohno, and H. Tanaka, "Angular Sensitivity Steering in CNT Electromagnetic Wave Detector", IEEE Antennas and Wireless Propagation Letters xx, 1-1 (2016). doi:10.1109/LAWP.2016.2640272
  3. T. Yasunishi, Y. Takabayashi, S. Kishimoto, R. Kitaura, H. Shinohara, and Y. Ohno, "Origin of residual particles on transferred graphene grown by CVD", Jpn. J. Appl. Phys. 55, 080305-1-4 (2016). doi:10.7567/JJAP.55.080305
  4. F. Wang, M. Endo, S. Mouri. Y. Miyauchi, Y. Ohno, A. Wakamiya, Y. Murata, and K. Matsuda, "Highly stable perovskite solar cells with an all-carbon hole transport layer", Nanoscale 8, 11882-11888 (2016). doi:10.1039/C6NR01152G
  5. A. Kaskela, P. Laiho, N. Fukaya, K. Mustonen, T. Susi, H. Jiang, N. Houbenov, Y. Ohno, and E. I. Kauppinen, "Highly individual SWCNTs for high performance thin film electronics", Carbon 103, 228-234 (2016). doi:10.1016/j.carbon.2016.02.099
  6. A. Kaskela, K. Mustonen, P. Laiho, Y. Ohno, and E. I. Kauppinen, "Toward the Limits of Uniformity of Mixed Metallicity SWCNT TFT Arrays with Spark-Synthesized and Surface-Density-Controlled Nanotube Networks", ACS Appl. Mater. Interfaces 7, 28134-28141 (2015). doi:10.1021/acsami.5b10439
  7. H. Tanaka, Y. Ohno, and Y. Tadokoro, "Angular Sensitivity of VHF-Band CNT Antenna", IEEE Trans. Nanotechnol. 14, 1112-1116 (2015). doi:10.1109/TNANO.2015.2477813
  8. H. Shirae, D. Y. Kim, K. Hasegawa, T. Takenobu, Y. Ohno, and S. Noda, "Overcoming the quality–quantity tradeoff in dispersion and printing of carbon nanotubes by a repetitive dispersion–extraction process", Carbon 91, 20-29 (2015). doi:10.1016/j.carbon.2015.04.033
  9. M. Maeda, J. Hirotani, R. Matsui, K. Higuchi, S. Kishimoto, T. Tomura, M. Takesue, K. Hata, and Y. Ohno, "Printed, short-channel, top-gate carbon nanotube thin-film transistors on flexible plastic film", Appl. Phys. Exp. 8, 045102-1-4 (2015). doi:10.7567/APEX.8.045102
  10. F. Wang, D. Kozawa, Y. Miyauchi, K. Hiraoka, S. Mouri, Y. Ohno, and K. Matsuda, "Considerably improved photovoltaic performance of ​carbon nanotube-based solar cells using metal oxide layers", Nature Commn. 6, 6305-1-4 (2015). doi:10.1038/ncomms7305
  11. N. Fukaya, D. Y. Kim, S. Kishimoto, S. Noda, and Y. Ohno, "One-Step Sub-10 um Patterning of Carbon-Nanotube Thin Films for Transparent Conductor Applications", ACS Nano 8, 3285-3293 (2014). doi:10.1021/nn4041975
  12. F. Wang, D. Kozawa, Y. Miyauchi, K. Hiraoka, S. Mouri, Y. Ohno, and K. Matsuda, "Fabrication of Single-Walled Carbon Nanotube/Si Heterojunction Solar Cells with High Photovoltaic Performance", ACS Photonics 1, 360-364 (2014). doi:10.1021/ph400133k
  13. T. Yasunishi, S. Kishimoto, and Y. Ohno, "Influence of ambient air on n-type carbon nanotube thin-film transistors chemically doped with polyethyleneimine", Jpn. J. Appl. Phys. 53, 05FD01-1-5 (2014).
  14. T. Yasunishi, S. Kishimoto, E. I. Kauppinen, and Y. Ohno, "Fabrication of high-mobility n-type carbon nanotube thin-film transistors on plastic film", phys. stat. sol (c) 10, 1612-1615 (2013). doi:10.1002/pssc.201300231
  15. M. A. Hughes, K. P. Homewood, R. J. Curry, Y. Ohno, and T. Mizutani, "An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry", Appl. Phys. Lett. 103, 133508-1-4 (2013). doi:10.1063/1.4823602
  16. D.-M. Sun, M. Y. Timmermans, A. Kaskela, A. G. Nasibulin, S. Kishimoto, T. Mizutani, E. I. Kauppinen, and Y. Ohno, "Mouldable all-carbon integrated circuits", Nature Commun. 4, 2302-1-8 (2013). doi:10.1038/ncomms3302
  17. K. Higuchi, S. Kishimoto, Y. Nakajima, T. Tomura, M. Takesue, K. Hata, E. I. Kauppinen, and Y. Ohno, "High-Mobility, Flexible Carbon Nanotube Thin-Film Transistors Fabricated by Transfer and High-Speed Flexographic Printing Techniques", Appl. Phys. Exp. 6, 085101-1-4 (2013). doi:10.7567/APEX.6.085101
  18. A. Znidarsic, A. Kaskela, P. Laiho, M. Gaberscek, Y. Ohno, A. G. Nasibulin, E. I. Kauppinen, and A. Hassanien, "Spatially Resolved Transport Properties of Pristine and Doped Single-Walled Carbon Nanotube Networks", J. Phys. Chem. C 117, 13324-13330 (2013). doi:10.1021/jp403983y
  19. K. Suzuki, Y. Ohno, S. Kishimoto, and T. Mizutani, "Investigation of Interface Charges of High-k Gate Dielectrics and Their Effects on Carbon Nanotube Field-Effect Transistors", Appl. Phys. Exp. 6, 024002-1-4 (2013). doi:10.7567/APEX.6.024002
  20. M. Tamaoki, S. Kishimoto, Y. Ohno and T. Mizutani, "Electrical properties of the graphitic carbon contacts on carbon nanotube field effect transistors", Appl. Phys. Lett. 101, 033101-1-3 (2012). doi:10.1063/1.4737169
  21. M. Y. Timmermans, D. Estrada, A. G. Nasibulin, J. D. Wood, A. Behnam, D.-M. Sun, Y. Ohno, J. W. Lyding, A. Hassanien, E. Pop, and E. I. Kauppinen, "Effect of Carbon Nanotube Network Morphology on Thin Film Transistor Performance", Nano Res. 5, 307-319 (2012). doi:10.1007/s12274-012-0211-8
  22. H. Imaeda, S. Ishii, S. Kishimoto, Y. Ohno, and T. Mizutani, "Observation of N-Type Conduction in Carbon Nanotube Field-Effect Transistors with Au Contacts in Vacuum", Jpn. J. Appl. Phys. 51, 02BN06-1-4 (2012). doi:10.1143/JJAP.51.02BN06
  23. Y. Okigawa, Y. Ohno, S. Kishimoto, and T. Mizutani, "Estimation of Height of Barrier Formed in Metallic Carbon Nanotube", Jpn. J. Appl. Phys. 51, 02BN01-1-4 (2012). doi:10.1143/JJAP.51.02BN01
  24. S. Ishii, S. Kishimoto, Y. Ohno, and T. Mizutani, "Air-Free Fabrication and Investigation of Effect of Air Exposure on Carbon Nanotube Field-Effect Transistors", Materials Express 1, 285-290 (2011). doi:10.1166/mex.2011.1037
  25. Y. Miyata, K. Shiozawa, Y. Asada, Y. Ohno, R. Kitaura, T. Mizutani, and H. Shinohara, "Length-Sorted Semiconducting Carbon Nanotubes for High-Mobility Thin Film Transistors", Nano Research 4, 963-970 (2011). doi:10.1007/s12274-011-0152-7
  26. Y. Okigawa, S. Kishimoto, Y. Ohno, and T. Mizutani, "Electrical properties of carbon nanotube thin-film transistors fabricated using plasma-enhanced chemical vapor deposition measured by scanning probe microscopy", Nanotechnol. 22, 195202-1-7 (2011). doi:10.1088/0957-4484/22/19/195202
  27. D.-M. Sun, M. Y. Timmermans, Y. Tian, A. G. Nasibulin, E. I. Kauppinen, S. Kishimoto, T. Mizutani, and Y. Ohno, "Flexible high-performance carbon nanotube integrated circuits", Nature Nanotechnol. 6, 156-161 (2011). doi:10.1038/nnano.2011.1
  28. S. Ishii, Y. Ohno, S. Kishimoto, and T. Mizutani, "Thin Single-Walled Carbon Nanotubes with Narrow Diameter Distribution Grown by Cold-Wall Chemical Vapor Deposition Combined with Co Nanoparticle Deposition", Jpn. J. Appl. Phys. 50, 015102-1-4 (2011). doi:10.1143/JJAP.50.015102
  29. K. Hata, Y. Ohno, S. Kishimoto, and T. Mizutani, "Improvement in alignment of single-walled carbon nanotubes grown on quartz substrate", phys. stat. sol (c) 8, 561-563 (2010). doi:10.1002/pssc.201000551
  30. Y. Ohno, N. Moriyama, S. Kishimoto, and T. Mizutani, "Impact of fixed charges at interfaces on the operation of top-gate carbon nanotube field-effect transistors", phys. stat. sol (c) 8, 567-569 (2010). doi:10.1002/pssc.201000571
  31. Y. Asada, Y. Miyata, K. Shiozawa, Y. Ohno, R. Kitaura, T. Mizutani, and H. Shinohara, "Thin-Film Transistors with Length-Sorted DNA-Wrapped Single-Wall Carbon Nanotubes", J. Phys. Chem. C 115, 270-273 (2010). doi:10.1007/s12274-011-0152-7
  32. Y. Awano, S. Sato, M. Nihei, T. Sakai, Y. Ohno, and T. Mizutani, "[Invited paper] Carbon Nanotubes for VLSI: Interconnect and Transistor Applications", Proc. IEEE 98, 2015-2031 (2010). doi:10.1109/JPROC.2010.2068030
  33. T. Mizutani, Y. Okigawa, Y. Ono, S. Kishimoto, and Y. Ohno, "Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors", Appl. Phys. Exp. 3, 11510-1-3 (2010). doi:10.1143/APEX.3.115101
  34. N. Moriyama, Y. Ohno, K. Suzuki, S. Kishimoto, and T. Mizutani, "High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges", Appl. Phys. Exp. 3, 105102-1-3 (2010). doi:10.1143/APEX.3.105102
  35. Y. Asada, Y. Miyata, Y. Ohno, R. Kitaura, T. Sugai, T. Mizutani, and H. Shinohara, "High-Performance Thin-Film Transistors with DNA-Assisted Solution Processing of Isolated Single-Walled Carbon Nanotubes", Adv. Mater. 22, 1-4 (2010). doi:10.1002/adma.200904006
  36. Y. Nakashima, Y. Ohno, S. Kishimoto, M. Okochi, H. Honda, and T. Mizutani, "Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors", J. of Nanosci. and Nanotechnol. 10, 3805-3809 (2010). doi:10.1166/jnn.2010.1983
  37. R. Xiang, E. Einarsson, J. Okawa, T. Thurakitseree, Y. Murakami, J. Shiomi, Y. Ohno, and S. Maruyama, "Parametric Study of Alcohol Catalytic Chemical Vapor Deposition for Controlled Synthesis of Vertically Aligned Single-Walled Carbon Nanotubes ", J. of Nanosci. and Nanotechnol. 10, 3901-3906 (2010). doi:10.1166/jnn.2010.2011
  38. Y. Ono, S. Kishimoto, Y. Ohno, and T. Mizutani, "Thin film transistors using PECVD-grown carbon nanotubes", Nanotechnol. 21, 205205-1-5 (2010). doi:10.1088/0957-4484/21/20/205202
  39. N. Moriyama, Y. Ohno, T. Kitamura, S. Kishimoto, and T. Mizutani, "Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges", Nanotechnol. 21, 165201-1-7 (2010). doi:10.1088/0957-4484/21/16/165201
  40. Y. Okigawa, S. Kishimoto, Y. Ohno, and T. Mizutani, "Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy", Jpn. J. Appl. Phys. 49, 02DB02-1-4 (2010). doi:10.1143/JJAP.49.02BD02
  41. T. Mizutani, H. Ohnaka, Y. Okigawa, S. Kishimoto,Y. Ohno, "A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition", JOURNAL OF APPLIED PHYSICS 106, 73705-1-5 (2009). doi:10.1109/55.661171
  42. T. Mizutani, Y. Ohno, S. Kishimoto, "Electrical properties of carbon nanotube FETs [invited paper]", Proc. SPIE 7037, 703703-1-10 (2008). doi:10.1117/12.794695
  43. D. Phokharatkul, Y. Ohno, H. Nakano, S. Kishimoto, T. Mizutani, "High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method", Appl. Phys. Lett. 93, 53112-1-3 (2008). doi:10.1063/1.2969290
  44. G. I. Shim, Y. Kojima, S. Kono, Y. Ohno, T. Ishijima, "Fabrication of carbon nanotubes by slot-excited microwave plasma-enhanced chemical vapor deposition", Jpn. J. Appl. Phys. 47, 5652-5655 (2008). doi:10.1143/JJAP.47.5652
  45. T. Mizutani, Y. Nosho, Y. Ohno, "Electrical properties of carbon nanotube FETs [invited paper]", Journal of Physics: Conference Series 109, 12002-1-8 (2008). doi:10.1088/1742-6596/109/1/012002
  46. Y. Okigawa, T. Umesaka, Y. Ohno, S. Kishimoto, T. Mizutani, "Potential Profile Measurement of Carbon Nanotube FETs Based on the Electrostatic Force Detection", NANO: Brief Reports and Reviews 3, 51-54 (2008). doi:10.1142/S1793292008000812
  47. Y. Ito, T. Okazaki, S. Okubo, M. Akachi, Y. Ohno, T. Mizutani, T. Nakamura, R. Kitaura, T. Sugai, H. Shinohara, "Enhanced 1,520 nm Photoluminescence from Er3+ Ions in Di-erbium-carbide Metallofullerenes (Er2C2) @C82 (Isomersュオ,ュカ,ュキ。ヒ", ACS Nano 1, 456-462 (2007). doi:10.1021/nn700235z.
  48. Y. Ohno, S. Iwasaki, Y. Murakami, S. Kishimoto, S. Maruyama, T. Mizutani, "Excitonic transition energies in single-walled carbon nanotubes: Dependence on environmental dielectric constant", phys. stat. sol. (b) 244, 4002-4005 (2007). doi:10.1002/pssb.200776124
  49. Y. Nosho, Y. Ohno, S. Kishimoto, T. Mizutani, "The effects of chemical doping with F4TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique", Nanotechnology 18, 415202-1-4 (2007). doi:10.1088/0957-4484/18/41/415202
  50. Y. Miyauchi, R. Saito, K. Sato, Y. Ohno, S. Iwasaki, T. Mizutani, J. Jiang, S. Maruyama, "Dependence of exciton transition energy of single-walled carbon nanotubes on surrounding dielectric materials", Chemical Physics Letters 442, 394-399 (2007). doi:10.1016/j.cplett.2007.06.018
  51. A. Kawano, S. Kishimoto, Y. Ohno, K. Maezawa, T. Mizutani, H. Ueno, T. Ueda, T. Tanaka, "AlGaN/GaN MIS-HEMTs with HfO2 Gate Insulator", phys. stat. sol. (c) 4, 2700-2703 (2007). doi:10.1002/pssc.200674769
  52. Y. Nosho, Y. Ohno, S. Kishimoto, T. Mizutani, "An Evidence of Edge Conduction at Nanotube/Metal Contact in Carbon Nanotube Devices", Jpn. J. Appl. Phys. 46, L474-L476 (2007). doi:10.1143/JJAP.46.L474
  53. Y. Ohno, S. Iwasaki, Y. Murakami, S. Kishimoto, S. Maruyama, T. Mizutani, "Chirality-dependent environmental effects in photoluminescence of single-walled carbon nanotubes", Physical Review B 73, 235427-1-6 (2006). doi:10.1103/PhysRevB.73.235427
  54. K. Tani, H. Ito, Y. Ohno, S. Kishimoto, M. Okochi, H. Honda, T. Mizutani, "Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors", Jpn. J. Appl. Phys. 45, 5481-5484 (2006). doi:10.1143/JJAP.45.5481
  55. H. Ohnaka, Y. Kojima, S. Kishimoto, Y. Ohno, T. Mizutani, "Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes", Jpn. J. Appl. Phys. 45, 5485-5489 (2006). doi:10.1143/JJAP.45.5485
  56. H. Shimauchi, Y. Ohno, S. Kishimoto, T. Mizutani, "Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors: Effect of Contamination Induced by Device Fabrication Process", Jpn. J. Appl. Phys. 45, 5501-5503 (2006). doi:10.1143/JJAP.45.5501
  57. Y. Nosho, Y. Ohno, S. Kishimoto, T. Mizutani, "Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors", Nanotechnology 17, 3412-3415 (2006). doi:10.1088/0957-4484/17/14/011
  58. Y. Ohno, T. Shimada, S. Kishimoto, S. Maruyama, T. Mizutani, "Carrier transport property in single-walled carbon nanotubes studied by photoluminescence spectroscopy", J. Physics: Conf. Series 38, - (2006). doi:10.1088/1742-6596/38/1/002
  59. Y. Aoi, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "AlGaN/GaN HEMTs with inclined-gate-recess structure", Jpn. J. Appl. Phys. 45, 3368-3371 (2006). doi:10.1143/JJAP.45.3368
  60. Y. Ohno, S. Kishimoto, T. Mizutani, "Photoluminescence of single-walled carbon nanotubes in field-effect transistors", Nanotechnology 17, 549-555 (2006). doi:10.1088/0957-4484/17/2/035
  61. J. Osaka, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Deep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy", Appl. Phys. Lett. 87, 222112-1-3 (2005). doi:10.1063/1.2137901
  62. I. Soga, S. Hayashi, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Direct integration of GaAs HEMTs on AlN ceramic substrates using fluidic self-assembly", Electronics Letters 41, 1275-1276 (2005). doi:10.1049/el:20052840
  63. Y. Kurokawa, Y. Ohno, T. Shimada, M. Ishida, S. Kishimoto, T. Okazaki, H. Shinohara, T. Mizutani, "Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate", Jpn. J. Appl. Phys. 44, L1341-L1343 (2005). doi:10.1143/JJAP.44.L1341
  64. K. Maezawa, T. Iwase, Y. Ohno, S. Kishimoto, T. Mizutani, K. Sano, M. Takakusaki, H. Nakata, "Metamorphic resonant tunneling diodes and its application to chaos generator ICs", Jpn. J. App. Phys. 44, 4790-4794 (2005). doi:10.1143/JJAP.44.4790
  65. 」ル. Kojima, S. Kishimoto, Y. Ohno, T. Mizutani, "Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters", Jpn. J. Appl. Phys. 44, 2600-2603 (2005). doi:10.1143/JJAP.44.2600
  66. T. Mizutani, S. Iwatsuki, Y. Ohno, S. Kishimoto, "Effects of Fabrication Process on Current-Voltage Characteristics of Carbon Nanotube Field Effect Transistors", Jpn. J. Appl. Phys. 44, 1599-1602 (2005). doi:10.1143/JJAP.44.1599
  67. S. Kishimoto, Y. Kojima, Y. Ohno, T. Sugai, H. Shinohara, T. Mizutani, "Growth of mm-Long Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition", Jpn. J. Appl. Phys. 44, 1554-1557 (2005). doi:10.1143/JJAP.44.1554
  68. Y. Ohno, S. Kishimoto, T. Mizutani, "Photoresponse of carbon nanotube field-effect transistors", Jpn. J. Appl. Phys. 44, 1592-1595 (2005). doi:10.1143/JJAP.44.1592
  69. Y. Nosho, Y. Ohno, S. Kishimoto, T. Mizutani, "n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes", Appl. Phys. Lett. 86, 73105-1-3 (2005). doi:10.1063/1.1865343
  70. T. Shimada, Y. Ohno, K. Suenaga, T. Okazaki, S. Kishimoto, T. Mizutani, R. Taniguchi, H. Kato, B. Cao, T. Sugai, H. Shinohara , "Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods", Jpn. J. Appl. Phys. 44, 469-472 (2005). doi:10.1143/JJAP.44.469
  71. Y. Ohno, Y. Kurokawa, S. Kishimoto, T. Mizutani, T. Shimada, M. Ishida, T. Okazaki, H. Shinohara, Y. Murakami, S. Maruyama, A. Sakai, K. Hiraga, "Synthesis of carbon nanotube peapods directly on Si substrates", Appl. Phys. Lett. 86, 23109-1-3 (2005). doi:10.1063/1.1849835
  72. T. Shimada, T. Sugai, C. Fantini, M. Souza, L. G. Cancado, A. Jorio, M. A. Pimenta, R. Saito, A. Dresselhaus, M. S. Dresselhaus, Y. Ohno, T. Mizutani, H. Shinohara, "Origin of the 2,450 cm-1 Raman bands in HOPG, single-wall and double-wall carbon nanotubes", Carbon 43, 1049-1054 (2005). doi:10.1016/j.carbon.2004.11.044
  73. K. Nakagami, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani , "Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy", Inst. Phys. Conf. Ser. (Paper presented at 31st In 184, 275-278 (2005).
  74. T. Sugimoto, Y. Ohno, S. Kishimoto, K. Maezawa, J. Osaka, T. Mizutani , "AlGaN/GaN MIS-HEMTs with ZrO2 Gate Insulator ", Inst. Phys. Conf. Ser. (Paper presented at 31st In 184, 279-282 (2005).
  75. T. Okino, Y. Ohno, S. Kishimoto, K. Maezawa, J. Osaka, T. Mizutani , "Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain Current DLTS", Inst. Phys. Conf. Ser. (Paper presented at 31st In 184, 271-274 (2005).
  76. T. Shimada, T. Sugai, Y. Ohno, S. Kishimoto, T. Mizutani, H. Yoshida, T. Okazaki, H. Shinohara, "Double-wall carbon nanotube field effect transistors: Ambipolar transport characteristics", Appl. Phys. Lett. 84, 2412-2414 (2004). doi:10.1063/1.1689404
  77. Y. Ohno, T. Nakao, S. Kishimoto, K. Maezawa, T. Mizutani, "Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors", Appl. Phys. Lett. 84, 2184-2186 (2004). doi:10.1063/1.1687983
  78. T. Shimada, Y. Ohno, T. Okazaki, T. Sugai, K. Suenaga, S. Iwatsuki, S. Kishimoto, T. Mizutani, T. Inoue, R. Taniguchi, N. Fukui, H. Okubo, H. Shinohara, "Transport properties of C78, C90 and Dy@C82 fullerenes-nanopeapods by field effect transistors", Physica E 21, 1089-1092 (2004). doi:10.1016/j.physe.2003.11.197
  79. K. Nakagami, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Surface potential measurements of AlGaN/GaN high-electron-mobility transistors by Kelvin probe force microscopy", Appl. Phys. Lett. 85, 6028-6029 (2004). doi:10.1063/1.1835551
  80. I. Soga, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Fluid Dynamic Assembly of Semiconductor Blocks for Heterogeneous Integration", Jpn. J. Appl. Phys. 43, 5951-5954 (2004). doi:10.1143/JJAP.43.5951
  81. K. Maezawa, Y. Kawano, Y. Ohno, S. Kishimoto, T. Mizutani, "Direct Observation of High-Frequency Chaos Signal from the Resonant Tunneling Chaos Generator", Jpn. J. Appl. Phys. 43, 5235-5238 (2004). doi:10.1143/JJAP.43.5235
  82. Y. Kurokawa, Y. Ohno, S. Kishimoto, T. Okazaki, H. Shinohara, T. Mizutani, "Fabrication Technique for Carbon Nanotube Single Electron Transistors Using Focused Ion Beam", Jpn. J. Appl. Phys. 43, 5669-5670 (2004). doi:10.1143/JJAP.43.5669
  83. T. Okino, M. Ochiai, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Drain Current DLTS of AlGaN-GaN MIS-HEMTs", IEEE EDL 25, 523-525 (2004). doi:10.1109/LED.2004.832788
  84. Y. Ohno, S. Kishimoto, T. Mizutani, T. Okazaki, H. Shinohara, "Chirality assignment of individual single-walled carbon nanotubes in carbon nanotube field-effect transistors by micro-photocurrent spectroscopy", Appl. Phys. Lett. 84, 1368-1370 (2004). doi:10.1063/1.1650554
  85. T. Tanaka, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani , "Experimental demonstration of capacitor-coupled resonant tunneling logic gates for ultra-short gate-delay operation ", Jpn. J. Appl. Phys. 42, 6766-6771 (2003). doi:10.1143/JJAP.42.6766
  86. K. Sato, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani , "A MESFET fabricated on a GaAs SOI substrate using a spin-on low-k dielectric film ", Jpn. J. Appl. Phys. 42, 6839-6840 (2003). doi:10.1143/JJAP.42.6839
  87. T. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto, K. Maezawa, "Drain current DLTS of AlGaN/GaN HEMTs", phys. stat. sol. (a) 200, 195-198 (2003). doi:10.1002/pssa.200303464
  88. T. Nakao, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Study on Off-State Breakdown in AlGaN/GaN HEMTs", phys. stat. sol. (c) 0, 2335-2338 (2003). doi:10.1002/pssc.200303405
  89. Y. Kawano, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, K. Sano, "88 GHz dynamic 2:1 frequency divider using resonant tunnelling chaos circuit", Electron. Lett. 39, 1546-1548 (2003). doi:10.1049/el:20030972
  90. T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa, "A Study on Current Collapse in AlGaN/GaN HEMTs Induced by Bias Stress", IEEE Trans. Electron Devices 50, 2015-2020 (2003). doi:10.1109/TED.2003.816549
  91. Y. Ohno, S. Iwatsuki, T. Hiraoka, T. Okazaki, S. Kishimoto, K. Maezawa, H. Shinohara, T. Mizutani, "Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst", Jpn. J. Appl. Phys. 42, 4116-4119 (2003). doi:10.1143/JJAP.42.4116
  92. I. Soga, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Fluidic Assembly of Thin GaAs Blocks on Si Substrates", Jpn. J. Appl. Phys. 42, 2226-2229 (2003). doi:10.1143/JJAP.42.2226
  93. M. Ochiai, M. Akita, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator", Jpn. J. Appl. Phys. 42, 2278-2280 (2003). doi:10.1143/JJAP.42.2278
  94. K. Kawada, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, M. Takakusaki, H. Nakata, "Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs", Jpn. J. Appl. Phys. 42, 2219-2222 (2003). doi:10.1143/JJAP.42.2219
  95. K. Kumada, T. Murata, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, N. Sawaki, "Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN", Jpn. J. Appl. Phys. 42, 2250-2253 (2003). doi:10.1143/JJAP.42.2250
  96. T. Okazaki, T. Shimada, K. Suenaga, Y. Ohno, T. Mizutani, J. Lee, Y. Kuk, H. Shinohara , "Electronic Properties of Gd@C82 Metallofullerene Peapods: (Gd@C82)n@SWNTs", Applied Physics A 76, 475-478 (2003). doi:10.1007/s00339-002-2039-7
  97. T. Mizutani, H. Makihara, M. Akita, Y. Ohno, S. Kishimoto, K. Maezawa , "Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors", Jpn. J. Appl. Phys. 42, 424-425 (2003). doi:10.1143/JJAP.42.424
  98. Y. Yokoyama, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Experimental demonstration of a resonant tunneling delta-sigma modulator for high-speed, high-resolution analog-to-digital converter", Inst. Phys. Conf. Ser. (Compound Semiconductors 20 174, 243-246 (2003).
  99. T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa, "Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations", phys. stat. sol. (a) 194, 447-451 (2002). doi:10.1002/1521-396X(200212)
  100. T. Shimada, T. Okazaki, R. Taniguchi, T. Sugai, H. Shinohara, K. Suenaga, Y. Ohno, S. Mizuno, S. Kishimoto, T. Mizutani, "Ambipolar Field-Effect Transistor Behavior of Gd@C82 Metallofullerene Peapods", Appl. Phys. Lett. 81, 4067-4069 (2002). doi:10.1063/1.1522482
  101. T. Aoyama, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Effects of the HEMT Parameters on the Operation Frequency of Resonant Tunneling Logic Gate MOBILE", Electronics and Communications in Japan, Part 2 85, 1-6 (2002). doi:10.1002/ecjb.10055
  102. S. Mizuno, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors", Jpn. J. Appl. Phys. 41, 5125-5126 (2002). doi:10.1143/JJAP.41.5125
  103. T. Nakao, Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa, T. Mizutani, "Elecroluminescence in AlGaN/GaN High Electron Mobility Transistors", Jpn. J. Appl. Phys. 41, 1990-1991 (2002). doi:10.1143/JJAP.41,1990
  104. Y. Kawano, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "50 GHz Frequency Divider Using Resonant Tunneling Chaos Circuit", Electron. Lett. 38, 305-306 (2002). doi:10.1049/el:20020222
  105. タトサウハケ 大野雄高, 岸本茂, 前澤宏一, 水谷孝, "共鳴トンネル論理ゲートMOBILEにおける入力用HEMTのゲート幅と動作速度の関係", 電子情報通信学会論文誌C J85-C, 181-186 (2002).
  106. Y. Kawano, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit", Jpn. J. Appl. Phys. 41, 1150-1153 (2002). doi:10.1143/JJAP.41.1150
  107. H. Makihara, M. Akita, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "The Low-Frequency Noise Characteristics of AlGaN/GaN HEMTs", Int. Phys. Conf. Series (Compound Semiconductors 2 170, 113-117 (2002).
  108. Y. Ohno, T. Nakao, M. Akita, S. Kishimoto, K. Maezawa, T. Mizutani, "Electroluminescence in AlGaN/GaN HEMTs", Inst. Phys. Conf. Ser. 170, 119-124 (2002).
  109. Y. Yokoyama, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Delta-Sigma Analog-to-Digital Converter Using Resonant Tunneling Diodes", Jpn. J. Appl. Phys. 40, L1005-L1007 (2001). doi:10.1143/JJAP.40.L1005
  110. Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in a Thin AlGaAs Barrier ", Jpn. J. Appl. Phys. 40, 2065-2068 (2001). doi:10.1143/JJAP.40.2065
  111. Y. Kawano, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Robust Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit", Jpn. J. Appl. Phys. 39, 3334-3338 (2000). doi:10.1143/JJAP.39.3334
  112. Y. Ohno, K. Asaoka, S. Kishimoto, K. Maezawa, T. Mizutani, "Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy", J. Appl. Phys. 87, 4332-4336 (2000). doi:10.1063/1.373074
  113. Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, "Photoluminescence Study of Resonant Tunneling Transistor with P+/n-Junction Gate", Jpn. J. Appl. Phys. 39, 35-40 (2000). doi:10.1143/JJAP.39.35
  114. Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, T. Akeyoshi, "Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors", Jpn. J. Appl. Phys. 38, 2586-2589 (1999). doi:10.1143/JJAP.38.2586
  115. H. Niwa, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, H. Yamazaki, T. Taniguchi , "Measurements of Electroluminescence Intensity Distibution in the Direction of Gate Width of n+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys. 38, 1363-1364 (1999). doi:10.1143/JJAP.38.1363
  116. K. Asaoka, Y. Ohno, S. Kishimoto, T. Mizutani, "Microscopic Photoluminescence Study of InAs Quantum Dots Grown on (100) GaAs", Jpn. J. Apl. Phys. 38, 546-549 (1999). doi:10.1143/JJAP.38.546
  117. T. Murata, Y. Ohno, S. Kishimoto, T. Mizutani, "Photoluminescence Intensity Enhancement Caused by Electron Beam Irradiation into AlGaAs/GaAs Quantum Wells", Solid-State Electronics 43, 147-152 (1999).
  118. H. Niwa, Y. Ohno, S. Kishimoto, T. Mizutani, H. Yamazaki, T. Taniguchi, "Electroluminescence Measurement of n+ Self-Aligned GaAs MESFETs", Jpn. J. Appl. Phys. 37, 1343-1347 (1998). doi:10.1143/JJAP.37.1343
  119. Y. Ohno, S. Kishimoto, T. Mizutani, T. Akeyoshi, "Logic Gate for Optical Input Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors", Electron. Lett. 34, 250-251 (1998). doi:10.1049/el:19980240
  120. Y. Ohno, S. Kishimoto, T. Mizutani, "Photoluminescence Study of Resonant-Tunneling Transistor", Int. Phys. Conf. Series 97TH8272, 613-616 (1997). doi:10.1109/ISCS.1998.711752
  121. Y. Ohno, S. Kishimoto, T. Mizutani, K. Maezawa, "Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation", IEICE Trans. Electron. E79-C, 1530-1536 (1996).